1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.b 10v drive nch mosfet R5007ANX ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) wide soa (safe operating area). 4) gate-source voltage (v gss ) guaranteed to be ? 30v. 5) drive circuits can be simple. 6) parallel use is easy. ? applications switching ? packaging specifications ? inner circuit package code basic ordering unit (pieces) ? 500 bulk R5007ANX type ? absolute maximum ratings (ta=25 ? c) parameter range of storage temperature channel temperature total power dissipation (tc=25 c) drain current gate-source voltage drain-source voltage v dss v gss p d tch 500 v v a w c 30 7 i d i dp continuous pulsed a 28 40 150 tstg c ? 55 to + 150 avalanche energy avalanche current i as 3.5 e as 3.2 symbol limits unit ? 1 pw 10 s, duty cycle 1% ? 2 l 500 h, v dd = 50v, r g = 25 , starting, tch = 25 c ? 3 limited only by maximum tempterature allowed ? 1 ? 3 ? 3 i s a i sp a a mj continuous pulsed 7 28 source current (body diode) ? 1 ? 2 ? 2 ? thermal resistance parameter c/w rth(ch-c) symbol limits unit c hannel to case 3.13 to-220fm (1)base (2)collector (3)emitter 4.5 2.8 0.75 3.2 ( 2 )( 3 ) ( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.0 2.5 10.0 15.0 ? 1 body diode (1) gate (2) drain (3) source ? 1 (1) (2) (3)
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.b data sheet R5007ANX ? electrical characteristics (ta=25 ? c) parameter gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss | y fs | c oss c rss min. ? 500 ? 2.5 ? ? 2.5 ? ? ? ? ? ? 0.8 500 ? 300 23 100 ? 100 4.5 1.05 ? ? ? ? na v gs = 30v, v ds = 0v i d = 1ma, v gs = 0v v ds = 500v, v gs = 0v v ds = 10v, i d = 1ma i d = 3.5a, v gs = 10v v ds = 25v i d = 3.5a, v ds = 10v v gs = 0v f = 1mhz v a v pf s pf pf t d(on) ? 20 ? ns t r ? 22 ? v gs = 10v ns t d(off) ? 50 ? r l = 71.4 ns t f ? 25 ? r g = 10 ns q g ? 13 ? v dd 250v i d = 7a v gs = 10v r l = 35.7 / r g = 10 nc q gd ? 5.5 ? nc typ. max. unit conditions i d = 3.5a, v dd 250v ? pulsed ? ? ? ? ? ? ? ? q gs ? 3.5 ? nc ? ? body diode characteristics (source-drain) (ta=25 ? c) v sd ?? 1.5 v i s = 7a, v gs =0v forward voltage ? pulsed parameter symbol min. typ. max. unit conditions ?
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.b data sheet R5007ANX ? electrical characteristic curves 0 2 4 6 8 10 0 1020304050 ta= 25c pulsed 5.0 v v gs = 4.5 v 6.0 v 7.0 v 8.0 v 6.5 v 10 v 5.5 v fig.2: typical output characteristics( ) 0.001 0.01 0.1 1 10 100 0.01.53.04.56.0 v ds = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.4 typical transfer characteristics 0.1 1 10 0.1 1 10 100 v gs = 10v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.6 static drain-source on-state resistance vs. drain current 0 0.5 1 1.5 2 2.5 3 051015 ta=25c pulsed i d = 3.5a i d = 7.0a fig.7 static drain-source on-state resistance vs. gate source 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10v pulsed ta= -25c ta= 25c ta= 75c ta= 125c fig.9 forward transfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 ta = 25c single pulse dc operation p w =100us p w =1ms operation in this area is limited by r ds(on) fig.1 maximum safe operating aera fig.3: typical output characteristics( ) 0 1 2 3 4 5 012345 ta= 25c pulsed v gs = 4.5 v 5.0 6.0 5.5 6.5 7.0 8.0 10 fig.8 static drain-source on-state resistance vs. channel 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 v gs = 10v pulsed i d = 3.5a i d = 7a fig.5 gate threshold voltage vs. channel 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10v i d = 1ma drain-source voltage : v ds ( v ) drain current : i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain-source voltage: v ds (v) drain current: i d (a) drain current : i d (a) static drain-source on-stat e resistance : r ds(on) ( ? ) channel temperature: t ch (c) gate threshold voltage: v gs(th) (v) gate-source voltage : v gs (v) drain current : i d (a) gate-source voltage : v gs (v) static drain-source on-stat e resistance : r ds(on) ( ? ) channel temperature: t ch (c) static drain-source on-state resistance : r ds(on ) ( ? ) drain current : i d (a) forward transfer admittance : |yfs| (s)
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.b data sheet R5007ANX 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 ta = 25c single pulse : 1unit rth ch-a t = t rth ch-a rth ch-a = 54.3c/w 10 100 1000 0.1 1 10 100 ta= 25c di / dt= 100a / s v gs = 0v pulsed fig.13 reverse recovery time vs.reverse drain current 0.01 0.1 1 10 100 00.511.5 v gs = 0v pulsed ta= 125c ta= 75c ta= 25c ta= -25c fig.10 reverse drain current vs. sourse-drain voltage 0 5 10 15 0 5 10 15 20 25 ta= 25c v dd = 250v i d = 7a r g = 10 ? pulsed fig.12 dynamic input characteristics 1 10 100 1000 10000 0.1 1 10 100 1000 c iss c oss c rs ta= 25c f= 1mhz v gs = 0v fig.11 typical capacitance vs. drain-source voltage 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) ta= 25c v dd = 250v v gs = 10v r g = 10 ? pulsed fig.14 switching characteristics fig.15 normalized transient thermal resistance vs. pulse w idth total gate charge : q g (nc) gate-source voltage : v gs (v) drain-source voltage : v ds (v) capacitance : c (pf) source-drain voltage : v sd (v) reverse drain current : i dr (a) reverse drain current : i dr (a) reverse recovery time: t rr (ns) drain current : i d (a) switching time : t (ns) pulse width : pw(s) normarized transient therma l resistance : r (t)
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.01 - rev.b data sheet R5007ANX ? switching characteristics measurement circuit fig.1 switching time measurement circuit fig.2 switching waveforms fig.3 gate charge measurement circuit fig.4 gate charge waveform fig.5 avalanche measurement circuit fig.6 avalanche waveform i g (const.)
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